Applications of graphenic carbon materials

Sputtered Graphenic Carbon: IEDM 2018

   and IJEDS 2019 paper

Graphenic Carbon-Silicon Schottky Diodes: IEDM 2016

UPDATE: It seems that Intel's and Micron's 3D XPoint memory is using carbon interconnect material as its
OTS and PCM contacts. The TEM-images indicate a low density (~2 g/cm3) interconnect material like carbon.
https://ieeexplore.ieee.org/abstract/document/8353635/   and https://ieeexplore.ieee.org/document/8739746 
and https://link.springer.com/article/10.1007/s10854-019-02373-y

IMEC confirmed in 2020 the better performance with carbon layer https://ieeexplore.ieee.org/document/9174799

IBM showed at IEDM 2023 the benefits of a carbon layer in phase change memory https://ieeexplore.ieee.org/document/10413792

 

 

High performance x-ray windows

now in high volume production

and in products at OLYMPUS

and BRUKER products

 

 

 

 

 
Ultrastrong membranes for x-ray windows  

 

 

 

 

 

Ultimate tensile strength of graphenic carbon is increased to ~7 GPa

 

 

 

The carbon-nanotube computer has arrived - article published in Nature

The most complex electronic device yet built from carbon nanotubes has been demonstrated. The system is a functional universal computer, and represents a significant advance in the field of emerging electronic materials. Read more here.


Carbon nanotubes finally deliver - article published in Nature

A carbon-nanotube transistor has been made that performs better than the best conventional silicon analogues. The result propels these devices to the forefront of future microchip technologies. Read more here.

CMOS without dopants: Reconfigurable Silicon Nanowire Transistors

ITRS2.0 working group on ERD (emerging research devices) ITRS_2015_Beyond_CMOS_ERD_Report

New ITRS2.0 Edition (link)

 

Novel devices

coming soon

 

New memory technologies (ReRAM)

carbon-based resistive memory
recently IBM jumped on the this topic and
made an illustrative video

related patents:
March 8, 2007 Carbon memory US7728405B2
October 27, 2006 Carbon filament memory and fabrication method US7894253B2

 

Carbon-based interconnect technology

coming soon

 

Nanosytems

coming soon