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The students are able to describe, analyse and develop simple designs of bipolar technology, devices and circuits for the highest frequencies in accordance to the state of the art.

Fabrication and characterization of silicon bipolar junction transistors (BJTs) and silicon germanium heterojunction bipolar transistors (HBTs) (cutoff frequencies, noise behaviour), device parameters for circuit simulation, fundamentals of bipolar circuit design (differential amplifiers, bias networks, translinear circuits), fast analog and digital circuits (amplifiers, oscillators, multipliers, frequency dividers)

Fundamentals of analog circuits and electronic devices