Resistive switching devices

The controlled bottom–up self-assembly of nanoparticles into higher-order, three-dimensional structures is a promising approach towards high-density integrated, interconnected electronics. Systems featuring memristive resistance switching have applications in nonvolatile memory technology and neuromorphic electronics.



  • Julian M. Dlugosch, Henning Seim, Achyut Bora, Takuya Kamiyama, Itai Lieberman, Falk May, Florian Müller-Plathe, Alexei Nefedov, Saurav Prasad, Sebastian Resch, Kai Saller, Christian Seim, Maximilian Speckbacher, Frank Voges, Marc Tornow, and Peer Kirsch, Conductance Switching in Liquid Crystal-Inspired Self-Assembled Monolayer Junctions, ACS Appl. Mater. Interfaces 14, 31044−31053 (2022)

  • Mahmoud N. Almadhoun, Maximilian Speckbacher, Brian C. Olsen, Erik J. LuberSayed Youssef Sayed, Marc Tornow, and Jillian M. BuriakBipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon, Nano Lett. 21, 2666 (2021)

  • Maximilian Speckbacher, Matthias Jakob, Markus Döblinger, Jonathan G. C. Veinot, Aras Kartouzian, Ueli Heiz, Marc Tornow, Nonvolatile Memristive Switching in Self-assembled Nanoparticle Dimers, ACS Appl. Electron. Mater. 2, 1099 (2020)

  • M. Speckbacher, M. Rinderle, W. Kaiser, E. A. Osman, D. Chryssikos, A. Cattani-Scholz, J. M. Gibbs, A. Gagliardi, M. Tornow, Directed Assembly of Nanoparticle Threshold Selector Arrays, Adv. Elec. Mat. 5, 1900098 (2019)