Resistive switching devices

The controlled bottom–up self-assembly of nanoparticles into higher-order, three-dimensional structures is a promising approach towards high-density integrated, interconnected electronics. Systems featuring memristive resistance switching have applications in nonvolatile memory technology and neuromorphic electronics.

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Julian M. Dlugosch, Henning Seim, Achyut Bora, Takuya Kamiyama, Itai Lieberman, Falk May, Florian Müller-Plathe, Alexei Nefedov, Saurav Prasad, Sebastian Resch, Kai Saller, Christian Seim, Maximilian Speckbacher, Frank Voges, Marc Tornow, and Peer Kirsch, Conductance Switching in Liquid Crystal-Inspired Self-Assembled Monolayer Junctions, ACS Appl. Mater. Interfaces 14, 31044−31053 (2022)
Mahmoud N. Almadhoun, Maximilian Speckbacher, Brian C. Olsen, Erik J. Luber, Sayed Youssef Sayed, Marc Tornow, and Jillian M. Buriak, Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon, Nano Lett. 21, 2666 (2021)
Maximilian Speckbacher, Matthias Jakob, Markus Döblinger, Jonathan G. C. Veinot, Aras Kartouzian, Ueli Heiz, Marc Tornow, Nonvolatile Memristive Switching in Self-assembled Nanoparticle Dimers, ACS Appl. Electron. Mater. 2, 1099 (2020)
M. Speckbacher, M. Rinderle, W. Kaiser, E. A. Osman, D. Chryssikos, A. Cattani-Scholz, J. M. Gibbs, A. Gagliardi, M. Tornow, Directed Assembly of Nanoparticle Threshold Selector Arrays, Adv. Elec. Mat. 5, 1900098 (2019)